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UNISONIC TECHNOLOGIES CO., LTD 2SD669/A
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
1 SOT-223
NPN SILICON TRANSISTOR
1
SOT-89
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1 TO-92NL
1 TO-126C
1 TO-126
1 TO-251
1
TO-252 *Pb-free plating product number: 2SD669L/2SD669AL
ORDERING INFORMATION
Order Number Normal Lead Free Plating 2SD669-X-AA3-R 2SD669L-x-AA3-R 2SD669-x-AB3-R 2SD669L-x-AB3-R 2SD669-x-T60-K 2SD669L-x-T60-K 2SD669-x-T6C-R 2SD669L-x-T6C-R 2SD669-x-T92-B 2SD669L-x-T92-B 2SD669-x-T92-K 2SD669L-x-T92-K 2SD669-x-T9N-B 2SD669L-x-T9N-B 2SD669-x-T9N-K 2SD669L-x-T9N-K 2SD669-x-T9N-R 2SD669L-x-T9N-R 2SD669-x-TM3-T 2SD669L-x-TM3-T 2SD669-x-TN3-R 2SD669L-x-TN3-R 2SD669-x-TN3-T 2SD669L-x-TN3-T Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Reel Tube Tape Reel Tube
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ORDERING INFORMATION(Cont.)
Order Number Normal Lead Free Plating 2SD669A-x-AA3-R 2SD669AL-x-AA3-R 2SD669A-x-AB3-R 2SD669AL-x-AB3-R 2SD669A-x-T60-K 2SD669AL-x-T60-K 2SD669A-x-T6C-R 2SD669AL-x-T6C-R 2SD669A-x-T92-B 2SD669AL-x-T92-B 2SD669A-x-T92-K 2SD669AL-x-T92-K 2SD669A-x-T9N-B 2SD669AL-x-T9N-B 2SD669A-x-T9N-K 2SD669AL-x-T9N-K 2SD669A-x-T9N-R 2SD669AL-x-T9N-R 2SD669A-x-TM3-T 2SD669AL-x-TM3-T 2SD669A-x-TN3-R 2SD669AL-x-TN3-R 2SD669A-x-TN3-T 2SD669AL-x-TN3-T Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-251 TO-252 TO-252
NPN SILICON TRANSISTOR
Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E
Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Reel Tube Tape Reel Tube
2SD669L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating
(1) K: Bulk, R: Tape Reel, T: Tube (2) AA3: SOT-223, AB3: SOT-89, T60: TO-126, T 6C: TO-126C, TM3: TO-251, TN3: TO-252, T 92:TO-92, T9N: TO-92NL (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Collector Power Dissipation 2SD669 2SD669A SYMBOL VCBO VCEO VEBO IC lC(PEAK) SOT-223 TO-126 PD
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified)
RATINGS 180 120 160 5 1.5 3 0.5 1 UNIT V V V A A W W
Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified)
PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance Note: Pulse test. SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE fT Cob IC=10mA, RBE= IE=1mA, IC=0 VCB=160V, IE=0 VCE=5V, IC=150mA (Note) VCE=5V, IC=500mA (Note) IC=600mA, IB=50mA (Note) VCE=5V, IC=150mA (Note) VCE=5V, IC=150mA (Note) VCB=10V, IE=0, f=1MHz MIN 180 120 160 5 60 30 TYP MAX UNIT V V V A
10 320 1 1.5 140 14
V V MHz pF
CLASSIFICATION OF hFE1
RANK RANGE B 60-120 C 100-200 D 160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
DC Current Transfer Ratio vs. Collector Current 300 1.2
5 Ta=7
NPN SILICON TRANSISTOR
Collector to Emitter Saturation Voltage vs. Collector Current IC=10 IB
DC Current Transfer Ratio, hFE
250 200 150 100 50 1 1 3 10 30 100 300 1,000 3,000 Collector Current, IC (mA) VCE=5V
25 -20
Collector to emitter saturation voltage, VCE(SAT) (V)
1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 Collector Current, IC (mA)
5 =7 TC
1.2
Base to Emitter Saturation Voltage, VBE(SAT) (V)
Base to Emitter Saturation Voltage vs. Collector Current IC=10IB
20 TC=25 75
240
Gain Bandwidth Product, fT (MHz)
Gain Bandwidth Product vs. Collector Current VCE=5V Ta=25
1.0 0.8 0.6 0.4 0.2 0
200 160 120 80 40 0 10
1
3
10
30
100 300 1,000
Collector Current, IC (mA)
30 100 300 1,000 Collector Current, IC (mA)
Collector Output Capacitance vs. Collector to Base Voltage
Area of Safe Operation
Collector Output Capacitance, Cob (pF)
200
Collector Current, IC (A)
100 50 20 10 5 2 1
f=1MHz IE=0
3 (13.3V, 1.5A) 1.0 40V, 0.5A 0.3 0.1 0.03 0.01 1 DC Operation (TC=25 ) (120V, 0.04A) (160V, 0.02A) 2SD669 2SD669A
2
5
10
20
50
100
3
10
30
100
Collector to Base Voltage, VCB (V)
Collector to Emitter Voltage, VCE (V)
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UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
-2 0
300
2SD669/A
TYPICAL CHARACTERISTICS(Cont.)
Typical Transfer Characteristics 500
Collector Current, IC (mA)
NPN SILICON TRANSISTOR
200 100 50 20 10 5 2 1 0
VCE=5V
Ta= 75
0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25 -20
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